Speakers Bureau

A Fully Monolithic HMIC Low Noise Amplifier

T. Boles

M/A COM Semiconductor Business Unit,

Tel: 781-564-3386

Fax: 781-564-3141

A two/three stage monolithic silicon low noise amplifier has been designed utilizing SPICE modeling techniques. The circuit design architecture is based on high frequency, small signal BJT's, consisting of a common emitter stage at the input and a Darlington configured pair at the device...

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Design of Darlington Based Silicon MMIC Gain Blocks

T. Boles

M/A COM Semiconductor Business Unit,

Tel: 781-564-3386

Fax: 781-564-3141

In many wireless and CATV applications, the use of silicon MMIC gain blocks have replaced discrete devices for low level gain stages and medium power amplification. The gain blocks have become quite cost competitive in volume when compared with the discrete transistors and have the advantage of...

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RF and Microwave Solid-State Control

Professor Robert Caverly

ECE Department, Villanova University, Villanova, PA 19085, USA

Tel: +1-610-519-5660

Fax: +1-610-519-4436

Introduction to the field

A variety of semiconductor technologies is now available for RF and microwave control. This talk will address such control technologies as PIN diodes and FET-based elements and issues related to the choice of control technology for particular applications. Control design considerations will also...

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Microwave Phase Modulators and Shifters

Professor/Dr. Jozef W. Modelski

IEEE Division IV Director - 2012Institute of Radioelectronics, Warsaw University of Technology, Nowowiejska 15/19, Warsaw, 00-665 , Poland

Tel: 48-22-8253929

Fax: 48-22-8253769

This lecture presents an overview of digital and continuous phase modulators and shifters with semiconductor (varactor diodes, pin diodes, FETs) and ferrite elements. Design methods and optimization procedures of different shifter structures for receiving: maximum shifter bandwidth, minimum...

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High-Efficiency RF-Power Amplifiers

Frederick H. Raab

Green Mountain Radio Research, 77 Vermont Avenue, Colchester, VT 05446, USA

Tel: +1-802-655-9670

Fax: +1-802-655-9760

This talk is an overview of techniques for high-efficiency RF power amplification. First, some basic concepts about transistors and the concept of average efficiency are introduced. The characteristics of conventional amplifiers (classes A, B, and C) are then reviewed. The principles,...

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Kahn-Technique Transmitters

Frederick H. Raab

Green Mountain Radio Research, 77 Vermont Avenue, Colchester, VT 05446, USA

Tel: +1-802-655-9670

Fax: +1-802-655-9760

The Kahn envelope-elimination and restoration (EER) technique allows efficient but nonlinear RF amplifiers to be used to implement a high-efficiency linear transmitter. Fundamentally, a narrowband RF signal is regarded as simultaneous amplitude and phase modulation. The phase-modulated carrier...

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Low-Cost High-Efficiency HF Power Amplifiers

Frederick H. Raab

Green Mountain Radio Research, 77 Vermont Avenue, Colchester, VT 05446, USA

Tel: +1-802-655-9670

Fax: +1-802-655-9760

Recently marketed "low-cost" RF-power MOSFETs in plastic TO-247 packages are capable of generating significant RF power at high efficiency in single-frequency RF applications. This paper explores the use of these MOSFETs in broadband power amplifiers. PAs operating in classes D, DE,...

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Class E Switching-Mode High-Efficiency Power Amplifiers - from RF to Microwave

N. O. Sokal

Design Automation, Inc.,

Tel: +1 (617) 641-2388

Class E power amplifiers achieve significantly higher efficiency than for conventional Class B or C. Class E operates the transistor as an on/off switch and "shapes the voltage and current waveforms" to prevent simultaneous high voltage and high current in the transistor; that...

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Four (4) hour Tutorial Lecture "RF Power Amplifiers, Class A through S - How They Operate, and When to Use Each"

N. O. Sokal

Design Automation, Inc.,

Tel: +1 (617) 641-2388

With at least ten lettered classes of RF power amplifiers, and several combinations of these classes, many engineers are confused about RF power amplifiers. The complexity of the subject is compounded by the fact that RF power transistor acts either as a high-resistance current source or as a...

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